Shaping the transition from Silicon power devices to Wide bandgap technologies: device technology and key benefits in the system

Dr. Gerald Deboy,
Infineon Technologies Austria AG
Siemensstrasse 2, 9500 Villach, Austria
Gerald.Deboy@infineon.com

Dr. Gerald Deboy received the M.S. and Ph.D. degree in physics from the Technical University Munich in 1991 and 1996 respectively. He joined Siemens Corporate Research and Development in 1992 and the Semiconductor Division of Siemens in 1995, which became Infineon Technologies later on. His research interests were focused on the development of new device concepts for power electronics, especially the revolutionary COOLMOS™ technology. From 2004 onward he was heading the Technical marketing department for power semiconductors and ICs within the Infineon Technologies Austria AG. Since 2009 he is leading a business development group specializing on new fields for power electronics. He is a Sr. member of IEEE and has served as a member of the Technical Committee for Power Devices and Integrated Circuits within the Electron Device Society. He has authored and coauthored more than 90 papers in national and international journals including contributions to three student text books. He holds currently 130 granted international patents and has more applications pending.